SKM 2023 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 7: Poster I

HL 7.1: Poster

Montag, 27. März 2023, 13:00–15:00, P2/EG

Investigation of the P-line in indium doped silicon with low temperature photoluminescence by applying an illumination and annealing cycle — •Dominik Bratek, Katharina Peh, Kevin Lauer, Dirk Schulze, Stefan Krischok, Aaron Flötotto, and Robin Müller — Institut für Physik, Technische Universität Ilmenau, Weimarer Str. 32, 98693 Ilmenau, Germany

In recent years a photoluminescent feature called P-line is of rising interest for the current research [1,2,3] and, in combination with the so called ASiSii-defect model, may lead to an explanation of the infamous light induced degradation (LID) process in indium doped silicon [2,3]. In this contribution we show studies of indium implanted silicon by using low temperature photoluminescence (LTPL) spectroscopy. We investigate the LID cycle and it*s influence on the P-line and show a possibility to explained the observed behavior by the proposed energy diagram of the ASiSii-defect. In addition we present activation energies, determined during these investigations, which can be associated to ASiSii-defect transitions. [1] K. Terashima und T. Matsuda, Japanese Journal of Applied Physics 41 Part 1, No. 3A (2002). [2] K. Lauer, C. Möller, D. Schulze, and C. Ahrens, AIP Advances 5, 017101 (2015). [3] K. Lauer, C. Möller, C. Teßmann, D. Schulze and N. V. Abrosimov, physica status solidi, c 14.5 (2017).