SKM 2023 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 7: Poster I

HL 7.2: Poster

Monday, March 27, 2023, 13:00–15:00, P2/EG

Investigation of the influence of light-induced degradation on boron-doped silicon — •Robin Lars Benedikt Müller, Katharina Peh, Kevin Lauer, Dirk Schulze, Stefan Krischok, Dominik Bratek, and Aaron Flötotto — TU Ilmenau

For Si-based devices like solar cells or radiation detectors, the light-induced-degradation (LID) in doped Czochralski Si is a profound issue. A reasonable explanation for the appearing LID process is the so-called ASi-Sii defect model [1,2], whose possible defect configuration manifests itself in indium-doped silicon by the appearance of the so-called P-line in the spectrum of low-temperature photoluminescence (LTPL) [3]. Comparatively, boron-doped Si does not exhibit a equivalent line, instead showing near the associated energy only the well-known electron-hole liquid (EHL) luminescence [4]. Therefore we investigate the influence of various treatments such as illumination, annealing or quenching on the LTPL spectrum of different boron-doped Si samples with emphasis on the behavior of the EHL. Additionally we present EPR studies on the impact of these treatments. [1]: Möller, C. et.al, (2013), Light-induced degradation in indium-doped silicon. Phys. Status Solidi RRL, 7: 461-464 [2]: Möller, C. et.al. , ASi-Sii-defect Model of Light-induced Degradation in Silicon, Energy Procedia, Volume 55, 2014, Pages 559-563 [3]: Lauer, K. et.al., "Identification of photoluminescence P line in indium doped silicon as InSi-Sii defect", AIP Advances 5, 017101 (2015) [4]: Peh, K. et.al., Low-Temperature Photoluminescence Investigation of Light-Induced Degradation in Boron-Doped CZ Silicon. Phys. Status Solidi A, 219: 2200180.