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HL: Fachverband Halbleiterphysik

HL 7: Poster I

HL 7.58: Poster

Montag, 27. März 2023, 13:00–15:00, P2/EG

Nanowire-based light absorber patterning for artificial photosynthesis — •Juliane Koch¹, Jiajia Qiu², Peter Kleinschmidt¹, Huaping Zhao², Yong Lei², and Thomas Hannappel¹ — ¹TU Ilmenau, Institute for Physics, Fundamentals of energy materials, Ilmenau, Germany — ²TU Ilmenau, Institute for Physics, Applied nanophysics, Ilmenau, Germany

Due to the increased degrees of freedom in device structures and properties, III-V nanowires (NWs) have been predicted to outperform planar devices. In the context of energy conversion in solar cells and photoelectrochemical devices, the kinetics and transport behavior of different charge carriers in light absorbers are closely related to the selected materials and their shape. A key factor for commercially relevant development is the enhanced light absorption, in particular in an uniform NW array, combined with lower costs and material usage (e.g. of III-Vs) for nanowire-based light absorbers. This may ultimately require fabrication techniques with homogenous patterning over a large range. In this work we demonstrate the fabrication techniques for creation of a NW array and key requirements during MOVPE NW growth. By applying a surface patterning technique with anodic aluminum oxide (AAO) templates, arrays of gold droplets can be deposited on a surface, which acts as a catalyst for NW growth during metalorganic vapor phase epitaxy (MOVPE). Under defined process parameters vertical III-V semiconductor NW can be achieved via vapor-liquid-solid (VLS) growth in a horizontal MOVPE system.