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SKM 2023 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 7: Poster I

HL 7.8: Poster

Monday, March 27, 2023, 13:00–15:00, P2/EG

Atomic structure of As-modified Si(100) surfaces prepared in CVD ambienceManali Nandy1, Agnieszka Paszuk1, Oleksandr Romanyuk2, •Chris Yannic Bohlemann1, Aaron Flötotto3, Aaron Gieß1, Peter Kleinschmidt1, Ivan Gordeev2, Jana Houdkova2, Erich Runge3, and Thomas Hannappel11Fundamentals of Energy Materials, Institute of Physics, Ilmenau University of Technology, Ilmenau, Germany — 2Institute of Physics, Academy of Sciences of the Czech Republic, Prague, Czech Republic — 3Theoretical Physics 1, Institute of Physics, Ilmenau University of Technology, Ilmenau, Germany

For highly efficient III-V-on-Si devices, a low-defect III-V nucleation and a sharp interface are prerequisites. Stabilization of Si surfaces by arsenic is a promising technological step allowing to grow As-based III-V epitaxial layers in consecutive process steps. Here, we study the atomic structure of Si(100) surfaces prepared in As-rich ambiance utilizing MOCVD. Arsenic was supplied either directly via the precursor (TBAs) or indirectly as background As4. The Si(100):As surfaces were analysed with a multitude of techniques such as STM, LEED, AR-XPS and FTIR after contamination-free transfer to ultra-high vacuum. The experimental results are supported by ab initio density functional theory (DFT) calculations. STM scans provide atomic-scale details of As-stabilized Si(100) surface structure consisting of rows of predominately asymmetric dimers. DFT simulations revealed a new stable structure with asymmetric As-Si-H dimers. The presence of hydrogen on the surface was confirmed by FTIR.

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