SKM 2023 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 7: Poster I

HL 7.9: Poster

Montag, 27. März 2023, 13:00–15:00, P2/EG

Preparation of P- and III-rich GaInP (100) with subsequential water & oxygen exposure — •David Ostheimer, Mohammad Amin Zare Pour, Sahar Shekerabi, Agnieszka Paszuk, and Thomas Hannappel — Technische Universität Ilmenau, Ilmenau, Deutschland

III/V semiconductor multi-junction photoelectrochemical cells enable, either direct or indirect solar-to-fuel conversion with highest efficiencies to date, as their tunable bandgap enables optimal use of the solar spectrum. In tandem devices, GaInP has an appropriate bandgap for a top photoabsorber or a transparent, charge selective contact (window layer). A detailed understanding of the reactions at the semiconductor/electrolyte heterointerface is crucial to tailor the semiconductor surface appropriately to avoid trapping of the photogenerated charge carriers and reduce corrosion. Here, we study interaction of oxygen and water with the mixed-dimer, group-III-rich and phosphorus-rich GaInP (100) surface by combining in situ optical spectroscopy and in system photoelectron spectroscopy. The GaInP(100) surfaces were prepared by metal-organic chemical vapor deposition. The surface reconstruction of the as-prepared samples and after exposure was investigated by low energy electron diffraction. We find that the surface reconstruction of the GaInP(100) significantly affects its interaction with water. P-rich GaInP(100) surface shows much higher stability compared to the group-III-rich.