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KFM: Fachverband Kristalline Festkörper und deren Mikrostruktur
KFM 14: Polar Oxide Crystals and Solid Solutions II
KFM 14.3: Talk
Thursday, March 30, 2023, 14:40–15:00, POT 106
Hall effect in conductive ferroelectric domain walls in BaTiO3 — Henrik Beccard1, Elke Beyreuther1, Michael Rüsing1, Benjamin Kirbus1, Ekta Singh1, •Samuel Seddon1, Petr Bednyakov2, Jiri Hlinka2, and Lukas M. Eng1,3 — 1Institut für Angewandte Physik, TU Dresden, Nöthnitzer Straße 61, 01187 Dresden, Germany — 2Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, 18221 Praha 8, CZR — 3ct.qmat: Dresden-Würzburg Cluster of Excellence - EXC 2147, TU Dresden, 01062 Dresden, Germany
Two dimensional (2D) electronic systems are essential in cutting-edge nano- electronic research. Here, conductive ferroelectric domain walls (DWs) are experiencing a concerted research effort for the last decade. Much of the research, however, did focus onto measuring and tuning the electrical DW conductivity [1], with very little investigations reporting on the very fundamental DW properties such as charge carrier density and mobility. Here, we adapted the 4-point van der Pauw [2] geometry to probe these 2D sheets of ferroelectric DWs in BaTiO3, and were able to determine the aforementioned properties. We find large electron mobilities of 400 cm2 (Vs)−1 and decent electron densities [3]. Not only are these results by themselves novel, but also perfectly demonstrate the power of this simple methodology to quantify the charge carrier properties in any low-dimensional system.
[1] C. Godau, et al., ACS Nano 11, 4816 (2017)
[2] L. J. Van der Pauw, Philips Tech Rev 20, 220-224 (1958)
[3] H. Beccard, et al., ACS Appl. Nano Mater. 7, 8717-8722 (2022)