SKM 2023 – wissenschaftliches Programm
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KFM: Fachverband Kristalline Festkörper und deren Mikrostruktur
KFM 6: Poster
KFM 6.20: Poster
Dienstag, 28. März 2023, 17:00–19:00, P3
The impact of Schottky barriers when electrically contacting conductive domain-walls in lithium niobate single crystals — •Iuliia Kiseleva1, Uliana Yakhnevych2, Julius Ratzenberger1, Manuel Zahn1,3, Elke Beyreuther1, Michael Rüsing1, Holger Fritze2, and Lukas M. Eng1,4 — 1Institut für Angewandte Physik, TU Dresden, Nöthnitzer Straße 61, 01187 Dresden, Germany — 2Institut für Energieforschung und Physikalische Technologien, TU Clausthal, Am Stollen 19 B, Goslar, 38640, Germany — 3Experimentalphysik V, Universität Augsburg — 4ct.qmat: Dresden-Würzburg Cluster of Excellence - EXC 2147, TU Dresden, 01062 Dresden, Germany
Conductive domain walls (DWs) in lithium niobate are promising constituents for applications in nanoelectronics, due to their high conductance and ability to be created quasi-on-will through high-voltage poling. However, electrically contacting the DWs leads to the formation of a Schottky barrier between the DW and the electrode material. In this work, we study a variety of different factors affecting the electronic transport across the barrier, e.g. the electrode material, the quality of the lithium niobate surface, and the influence of the applied voltages during the DW conductivity-enhancement procedure. It was found that all these factors have a significant influence on the Schottky barrier formation; moreover, the bulk structure of the DWs is also influenced by the interface's state. Our results demonstrate the importance of reproducible sample surface conditions and identifying promising directions for implementing improved DW conductivity.