SKM 2023 – wissenschaftliches Programm

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MA: Fachverband Magnetismus

MA 31: Functional Antiferromagnetism II

MA 31.2: Vortrag

Mittwoch, 29. März 2023, 15:15–15:30, HSZ 04

Two-directional electrical switching of insulating antiferromagnetic thin films — •Christin Schmitt¹, Adithya Rajan¹, Grischa Beneke¹, Aditya Kumar¹, Tobias Sparmann¹, Hendrik Meer¹, Rafael Ramos², Miguel Angel Niño³, Michael Förster³, Eiji Saitoh^2,4, and Mathias Kläui¹ — ¹Institute of Physics, Johannes Gutenberg-University Mainz, Germany — ²WPI-AIMR, Tohoku University, Japan — ³ALBA Synchrotron Light Facility, Spain — ⁴Department of Applied Physics, The University of Tokyo, Japan

Antiferromagnets (AFMs) have gained increasing interest as active elements in spintronic devices due to intrinsic dynamics in the THz range and the absence of stray fields. However, efficient electrical writing and reading is necessary for applications. For insulating antiferromagnets different switching mechanisms based on spin-orbit torques or thermomagnetoelastic effects have been put forward [1,2]. Here, we focus on CoO/Pt thin films where we observe that electrical pulses along the same trajectory can lead to an increase or decrease of the electrical signal, depending on the current density of the pulse. By photoemission electron microscopy (PEEM) employing the x-ray magnetic linear dichroism (XMLD) effect we shed light on this observation and determine whether this is a sign for two competing switching mechanisms or rather some result of the sensitivity distribution of how the electrical measurement is conducted [3]. [1] T. Moriyama, et al., Sci. Rep. 8, 14167 (2018). [2] P. Zhang, et al., Phys. Rev. Lett. 123, 247206 (2019). [3] F. Schreiber, et al., Phys. Rev. Applied 16, 064023 (2021).