SKM 2023 – wissenschaftliches Programm
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MA: Fachverband Magnetismus
MA 31: Functional Antiferromagnetism II
MA 31.4: Vortrag
Mittwoch, 29. März 2023, 15:45–16:00, HSZ 04
Gate-tunable anomalous Hall effect in an antiferromagnet — Seo-jin Kim1, Jihang Zhu2, Mario Piva1, Marcus Schmidt1, Dorsa Fartab1, Andrew Mackenzie1,3, Michael Baenitz1, Michael Nicklas1, Helge Rosner1, Ashley Cook1,2, and •Haijing Zhang1 — 1Max Planck Institute for Chemical Physics of Solids, 01187 Dresden, Germany — 2Max Planck Institute for the Physics of Complex Systems, 01187 Dresden, Germany — 3Scottish Universities Physics Alliance, School of Physics and Astronomy, University of St Andrews, St Andrews KY16 9SS, UK
Probing and engineering the magnetic states is a key goal in contemporary condensed matter physics because it can facilitate the understanding of underlying mechanisms of many fundamental physical phenomena, such as the anomalous Hall effect. Here, we report the observation of an anomalous Hall effect in AgCrSe2, a layered triangular lattice metal that lacks inversion symmetry, and has a sizeable antiferromagnetic coupling between Cr spin 3/2 moments in adjacent layers. The anomalous Hall resistivity 3 µΩ cm is comparable to the largest magnitude observed in any antiferromagnetic system to date. We further demonstrate that the anomalous Hall response in thin layer devices can be switched on and off by an ionic gate. We also present the results of an illustrative model that suggests the anomalous Hall effect is driven by Berry curvature that correlates closely with the Rashba spin-orbit coupling. The capability of electrically switching the anomalous Hall effect opens up new avenues for potential voltage controlled spintronic devices.