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MA: Fachverband Magnetismus
MA 40: Poster Magnetism II
MA 40.15: Poster
Donnerstag, 30. März 2023, 14:00–16:00, P2/EG
Growth optimization and magnetotransport properties of ferromagnetic gadolinium nitride (GdN) thin films — •Raphael Hoepfl1,2, Manuel Müller1,2, Johannes Weber1,2, Matthias Opel1, Stephan Geprägs1, Hans Huebl1,2,3, Rudolf Gross1,2,3, and Matthias Althammer1,2 — 1Walther-Meißner-Institut, Bayerische Akademie der Wissenschaften, Garching, Germany — 2Technical University of Munich, TUM School of Natural Sciences, Physics Department, Garching, Germany — 3Munich Center for Quantum Science and Technology (MCQST), München, Germany
Ferromagnetic (FM) semiconductors are of great interest for spintronic devices. Gadolinium nitride (GdN) is one candidate for a FM semiconductor with a Curie temperature TC=65-70 K [1]. By performing SQUID magnetometry and magnetotransport experiments in a cryogenic environment, we investigate the static magnetic and magnetoresistive properties of GdN thin film heterostructures. Tantalum nitride (TaN)/GdN/TaN trilayers are grown on the thermal oxide of Si substrates using DC magnetron sputtering, where the TaN is used as a electrically conductive seed and top layer. We study the impact of the various deposition parameters, such as deposition pressure, substrate temperature, growth rate and reactive N2 gas flow on the static magnetic properties of GdN such as TC and saturation magnetization Ms. For GdN layer stacks grown with our optimized recipe, we perform magnetotransport experiments and identify the origin of magnetoresistance in our heterostructures.
[1] W. B. Mi et al., Appl. Phys. Lett. 102, 222411 (2013).