SKM 2023 – wissenschaftliches Programm
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MA: Fachverband Magnetismus
MA 40: Poster Magnetism II
MA 40.4: Poster
Donnerstag, 30. März 2023, 14:00–16:00, P2/EG
Current-induced creation of domain walls in synthetic antiferromagnets — Robin Msiska1, •Omer Fetai1, Raphael Kromin2, Davi Rodrigues3, and Karin Everschor-Sitte1,4 — 1TWIST group, University of Duisburg-Essen, Germany — 2Institute of Physics, Johannes Gutenberg University Mainz, Germany — 3Politecnico di Bari, Italy — 4Center for Nanointegration Duisburg - Essen (CENIDE)
Improvements in the storage capacity of modern-day memory devices are slowing down and new concepts for storing data are required. A suggestion for a three-dimensional data storage is the racetrack memory which stores information in terms of magnetic domains. The use of synthetic antiferromagnets (SAF), i.e., antiferromagnetically coupled ferromagnetic bilayer systems, accelerates the information access time because the domain walls can be moved up to ten times faster [1]. To obtain a market-ready device, many challenges must be overcome, one of which is integrating a controlled domain wall write process into SAFs. We study the controlled creation of domain walls in SAFs by electrical means. In the case of spin-transfer torques, we find a critical current strength above which antiferromagnetic domain walls are created from an inhomogeneity. In contrast to the ferromagnetic case [2] we show that the critical current density is an order of magnitude higher.
[1] Stuart S. P. Parkin and et. al. Nat.Nanotechnol. 10 (2015)
[2] M. Sitte et al. Phys. Rev. B 94, 064422 (2016)