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SKM 2023 – scientific programme

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MM: Fachverband Metall- und Materialphysik

MM 26: Interface Controlled Properties and Nanomaterials: Grain Boundaries and Stability, Spectroscopy and Interatomic Potentials

MM 26.10: Talk

Wednesday, March 29, 2023, 12:45–13:00, SCH A 216

Influence of a p-n Heterojunction on the Diffusive Transport in Tungsten Trioxide Thin Films — •Jan L. Dornseifer1, 2, Markus S. Friedrich1, 2, and Peter J. Klar1, 21Institute of Experimental Physics I, Justus-Liebig-University, Giessen, Germany — 2Center for Materials Research (ZfM), Justus-Liebig-University, Giessen, Germany

Tungsten trioxide (WO3) is (typically) an n-type semiconductor and a prominent electrochromic material. It changes its optical properties when charge carriers are inserted. Due to its excellent electrochromic properties, WO3 is the most commonly used functional material in so called "smart" windows which are a promising technology for significantly lowering the energy consumption for building climatization. Industrially manufactured polycrystalline WO3 thin films were coated with p-type nickel monoxide (NiOx) thin films by ion beam sputter deposition. In order to investigate the diffusive transport of hydrogen in WO3 thin films influenced by a p-n heterojunction, spatially and temporally resolved optical transmission measurements are conducted on NiOx/WO3-heterostructures during the potentiostatic coloration of the WO3 thin films. Spatial and temporal diffusion profiles determined by analyzing these measurements indicate that the lateral propagation of hydrogen in NiOx coated WO3 films is accelerated. In addition, an increased transmittance is observed in the colored state. To describe these findings, a model is set up based on an increase in hydrogen concentration inside the WO3 layer outside the space-charge region formed at the NiOx/WO3 interface.

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