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SKM 2023 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 24: Poster: Ion Beam Interaction with Surfaces and Interfaces

O 24.3: Poster

Montag, 27. März 2023, 18:00–20:00, P2/EG

In situ GISAXS observation of ion-induced nanoscale pattern formation on crystalline Ge(001) in the reverse epitaxy regime — •Denise Erb1, Peco Myint2,3, Kenneth Evans-Lutherodt4, Karl Ludwig4,5, and Stefan Facsko11Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Germany — 2Division of Materials Science and Engineering, Boston University, USA — 3X-ray Science Division, Argonne National Laboratory, USA — 4National Synchrotron Light Source II, Brookhaven National Laboratory, USA — 5Department of Physics, Boston University, USA

The ion-induced nanoscale pattern formation on a crystalline Ge(001) surface is observed in situ by means of grazing incidence small angle x-ray scattering (GISAXS). Analysis of the GISAXS intensity maps yields the temporal development of geometric parameters characterizing the changing pattern morphology. In comparison with theoretical predictions and with simulations of the patterning process based on a continuum equation we find good agreement for the temporal evolution of the polar facet angle, characteristic length, and surface roughness in the nonlinear regime. To achieve this agreement, we included an additional term in the continuum equation which adjusts the pattern anisotropy.

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