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O: Fachverband Oberflächenphysik

O 28: Organic Molecules on Inorganic Substrates III: Adsorption and Growth I

O 28.4: Vortrag

Dienstag, 28. März 2023, 11:15–11:30, CHE 89

Photoelectron Spectroscopy of N-heterocyclic carbenes on Si(111)(√3× √3)R30^∘-B surface — •Mike Thomas Nehring¹, Robert Zielinski¹, Mowpriya Das², Hazem Aldahhak³, Conor Hogan⁵, Uwe Gerstmann³, Wolf Gero Schmidt³, Mario Dähne¹, Martin Franz¹, Frank Glorius², and Norbert Esser⁴ — ¹Institut für Festkörperphysik, Technische Universität Berlin, Berlin, Deutschland — ²Westfälische Wilhelms-Universität Münster, Organisch-Chemisches Institut, Münster, Deutschland — ³Institut für Theoretische Materialphysik, Universität Paderborn, Paderborn, Deutschland — ⁴Leibniz-Institut für Analytische Wissenschaften - ISAS e.V., Berlin, — ⁵Institute for Structure of Matter (ISM-CNR), Rome, Italy

Silicon is the most commonly used element in the industry for manufacturing semiconductor-based components. Semiconductor devices today represent a cornerstone of modern technology, with a multitude of possible applications in research and development. A relatively new area of research is the growth of organic films on modified silicon surfaces. In this work we investigate the adsorption behaviour of various N-heterocyclic carbenes (NHCs) on the Si(111)(√3× √3)R30^∘-B surface. This research is conducted using X-ray photonelectron spectroscopy (XPS). By comparison of the experimental spectra with theoretical calculations it is found that all investigated NHCs bind to the Si adatoms of the Si(111)-B surface in an upright adsorption geometry. In addition, the monolayers show a high thermal stability and large work function reductions.