SKM 2023 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 31: Focus Session: Ion Beam Interaction with Surfaces and 2D Materials III
O 31.1: Topical Talk
Dienstag, 28. März 2023, 10:30–11:00, GER 38
Ultra-low energy ion implantation of two-dimensional materials — •Hans Hofsäss1, Felix Junge1, Manuel Auge1, Beata Kardynal2, Ursel Bangert3, Martin Wenderoth4, and Lino Pereira5 — 12nd Institute of Physics, University of Göttingen, Germany — 2Peter Grünberg Institute, Forschungszentrum Jülich, Germany — 3Department of Physics, University of Limerick, Ireland — 44th Institute of Physics, University of Göttingen, Germany — 5Department of Physics, KU Leuven, 3001 Leuven, Belgium
Doping of two-dimensional (2D) materials by ion implantation requires unique requirements regarding ion energy, ion beam optics and sample preparation. Efficient substitutional incorporation of low energy ions into the 2D lattice requires energies around 20 eV. We use a low energy mass selected ion beam system with UHV implantation chamber. A 30 keV mass selected ion beam is guided through differential pumping stages and homogenized using a beam sweep. An area of about 1-2 cm2 can be uniformly irradiated with these ultra-low-energy (ULE) ions with a beam current up to several microAmp. Results for doping of monolayer graphene with B+, N+ an P+ ions and doping of 2D MoS2 with Se+ and Cr+ ions will be presented. We discuss challenges for ULE ion implantation, such as non-flat substrates, ion sources and lateral selective doping. Results for analyses of the implantation efficiency and lateral doping are presented. The simulation of ULE ion implantation using novel Monte Carlo Binary Collision Approximation programs is also discussed.