SKM 2023 – scientific programme
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O: Fachverband Oberflächenphysik
O 32: Semiconductor Substrates
O 32.1: Talk
Tuesday, March 28, 2023, 10:30–10:45, GER 39
Progress in local growth of III/V-semiconductor structures — •Christian Bruckmann, Jürgen Bläsing, Armin Dadgar, and André Strittmatter — Otto-von-Guericke-Universität Magdeburg, PF4120 Magdeburg, Germany
We recently developed a laser-assisted metalorganic vapor phase epitaxy (LA-MOVPE) for local growth of III/V-semiconductors1. The principle is based on local heating of a selected growth area by high-power laser radiation. Metalorganic precursors are fed into the reactor to the locally heated area so that the chemical reactions leading to island growth are confined within the heated area. Thereby, selective area growth can be done without full wafer heating which is advantageous for heteroepitaxy of crystalline materials and monolithic III/V device integration on Si. We report on optimum conditions for homoepitaxial GaAs growth, n- and p-type doping as well as AlGaAs/GaAs heterostructures. We discuss the proper choice of precursors and lateral homogeneity of ternary layers.
1M. Trippel et al., "Laser-assisted local metal-organic vapor phase epitaxy", Rev. Sci. Instrum. 93, 113904 (2022)