O 32: Semiconductor Substrates
Dienstag, 28. März 2023, 10:30–12:45, GER 39
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10:30 |
O 32.1 |
Progress in local growth of III/V-semiconductor structures — •Christian Bruckmann, Jürgen Bläsing, Armin Dadgar, and André Strittmatter
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10:45 |
O 32.2 |
Post-synthesis of copper nitride monolayers from copper oxide films — •Mohammadreza Rostami, Biao Yang, Francesco Allegretti, Lifeng Chi, and Johannes V. Barth
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11:00 |
O 32.3 |
The role of mechanical strain in rare-earth silicide monolayers on Si(111) — •Kris Holtgrewe and Simone Sanna
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11:15 |
O 32.4 |
Electronic and magnetic properties of ultrathin FeBr2 films grown on Bi/Si(111) — •Shigemi Terakawa, Jiabao Yang, Shinichiro Hatta, Hiroshi Okuyama, Tetsuya Aruga, Niels Schröter, and Stuart Parkin
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11:30 |
O 32.5 |
In situ XPS Study on ultrathin FexOy Films on SrTiO3 — •Pia Maria Düring, Timo Krieg, and Martina Müller
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11:45 |
O 32.6 |
The contribution has been withdrawn.
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12:00 |
O 32.7 |
About the excitation of island growth orthogonal to the surface in the substrate Pb/Si(111)-(7x7) — •Paul Philip Schmidt, Lea Faber, and Regina Hoffmann-Vogel
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12:15 |
O 32.8 |
Solution-Synthesized Extended Graphene Nanoribbons Deposited by High-Vacuum Electrospray Deposition — •Sebastian Scherb, Antoine Hinaut, Xuelin Yao, Alicia Götz, Samir H. Al-Hilfi, Xiao-Ye Wang, Yunbin Hu, Zijie Qiu, Yiming Song, Klaus Müllen, Thilo Glatzel, Akimitsu Narita, and Ernst Meyer
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12:30 |
O 32.9 |
The contribution has been moved to O 85.4.
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