SKM 2023 – scientific programme
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O: Fachverband Oberflächenphysik
O 36: Poster: 2D Materials II
O 36.1: Poster
Tuesday, March 28, 2023, 18:00–20:00, P2/EG
Simulation of proximity effects in epitaxial graphene systems — •Andres David Peña Unigarro1, Florian Steffen Günther2,3, and Sibylle Gemming1 — 1Institute of Physics, TU Chemnitz, Chemnitz, Germany — 2IFSC, University of São Paulo, Brazil — 3UNESP, Brazil
Two-dimensional materials such as graphene are fascinating because they combine mechanical flexibility with unique electronic properties. The next level of complexity, however, comprises the assembly of various 2D materials to generate structures with enhanced characteristics. Using proximity effects, changes in the electronic, optical and transport properties of epitaxial graphene have been produced while preserving the regular honeycomb structure that can be grown on silicon carbide, SiC. Such modifications can, for instance, be achieved by proximity effects in hetero stacks with intercalate and absorbate layers with other 2D materials or by the presence of a functional integration environment. In the past years, many elements were intercalated below the graphene sheet, forming partly well-defined hetero bilayer systems with different functionalities. As suggested by density functional theory (DFT) studies, elements of the IV group can be used for this purpose. In this case, intercalation of heavy atoms like Pb are expected to introduce additional effects such as spin-orbit coupling to the electron gas of graphene. In this contribution, we present preliminary results obtained with DFT focusing on the study of modifications of the electronic structure of epitaxial graphene due to proximity effects generated by the intercalation of Pb on buffer layers on SiC.