SKM 2023 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 48: Focus Session: Semiconductor Surface Chemistry – from Reaction Mechanisms to Well-Ordered Interfaces I

O 48.1: Topical Talk

Mittwoch, 29. März 2023, 10:30–11:00, GER 38

Surface functionalization of semiconductors: Introducing spectroscopic labels, monolayer control for ultra-shallow doping, and providing surface passivation for atomically-precise processes — •Andrew Teplyakov — 112 Lammot DuPont Laboratory, Department of Chemistry and Biochemistry, University of Delaware, Newark, DE 19716, USA

Over the last several decades, chemistry for surface functionalization of semiconductors went through a number of directional changes that were largely dictated by the technology development. Some of the recent work in our group has been targeting modification of both flat surfaces and the surfaces of nanoparticular semiconductor materials to introduce spectroscopic labels, provide monolayer control for ultra-shallow doping, and also to control the passivation of surfaces for atomically-precise processes. This presentation will start with applying the basic principles of surface chemical design to silicon surfaces. Specifically, I will cover the solution reactions of boron- and nitrogen-containing compounds with hydrogen- and chlorine-terminated silicon surfaces. Parallels and major differences between the chemistry of (100) and (111) crystal faces of silicon will be examined. The reactions of the same surfaces with metalorganic precursor molecules will be presented to evaluate the role of minority sites (defects) in atomically-precise processing. Finally, the parallels between surface chemical modification of flat silicon surfaces and metal oxide nanomaterials will be examined and the challenges in connecting physical and chemical properties of these materials will be evaluated.