SKM 2023 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

O: Fachverband Oberflächenphysik

O 5: Focus Session: Ion Beam Interaction with Surfaces and 2D Materials I

O 5.8: Vortrag

Montag, 27. März 2023, 12:45–13:00, GER 38

Manipulation of the electrical and memory properties of MoS₂ field-effect transistors by highly charged ion irradiation — •Stephan Sleziona¹, Aniello Pelella², Enver Faella², Osamah Kharsah¹, Lucia Skopinski¹, André Maas¹, Yossarian Liebsch¹, Antonio Di Bartolomeo², and Marika Schleberger¹ — ¹Fakultät für Physik und Cenide, Universität Duisburg-Essen, Lotharstraße 1, 47057 Duisburg — ²Physics Department, University of Salerno, 84084 Fisciano, Salerno, Italy

Molybdenum disulfide (MoS₂) is a semiconductor that develops a direct bandgap of 1,8 eV when its thickness is reduced to the monolayer limit and is therefore a suitable 2D material for applications in opto-electronic devices. MoS₂ field-effect transistors (FET) in particular exhibit a hysteresis in their transfer characteristics, which can be utilized to realize a 2D memory device. This hysteresis is generally attributed to adsorbates or defects either in the MoS₂ lattice or in the underlying substrate. We fabricated MoS₂ FETs on SiO₂/Si substrates and irradiated these devices with Xe²⁸⁺ ions at a kinetic energy of 180 keV to deliberately introduce defects and modify their electrical and hysteretic properties. We evaluate different electrical properties before and after the irradiation and find clear influences of the irradiation e.g., on the conductivity and charge carrier mobility of the devices. Significantly reduced n-doping and a well-developed hysteresis can be measured after irradiation. We utilize this hysteresis to demonstrate the use of the MoS₂ FET as a memory device, which has remarkably longer relaxation times (≈ minutes) compared to previous works.