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O: Fachverband Oberflächenphysik
O 5: Focus Session: Ion Beam Interaction with Surfaces and 2D Materials I
O 5.8: Talk
Monday, March 27, 2023, 12:45–13:00, GER 38
Manipulation of the electrical and memory properties of MoS2 field-effect transistors by highly charged ion irradiation — •Stephan Sleziona1, Aniello Pelella2, Enver Faella2, Osamah Kharsah1, Lucia Skopinski1, André Maas1, Yossarian Liebsch1, Antonio Di Bartolomeo2, and Marika Schleberger1 — 1Fakultät für Physik und Cenide, Universität Duisburg-Essen, Lotharstraße 1, 47057 Duisburg — 2Physics Department, University of Salerno, 84084 Fisciano, Salerno, Italy
Molybdenum disulfide (MoS2) is a semiconductor that develops a direct bandgap of 1,8 eV when its thickness is reduced to the monolayer limit and is therefore a suitable 2D material for applications in opto-electronic devices. MoS2 field-effect transistors (FET) in particular exhibit a hysteresis in their transfer characteristics, which can be utilized to realize a 2D memory device. This hysteresis is generally attributed to adsorbates or defects either in the MoS2 lattice or in the underlying substrate. We fabricated MoS2 FETs on SiO2/Si substrates and irradiated these devices with Xe28+ ions at a kinetic energy of 180 keV to deliberately introduce defects and modify their electrical and hysteretic properties. We evaluate different electrical properties before and after the irradiation and find clear influences of the irradiation e.g., on the conductivity and charge carrier mobility of the devices. Significantly reduced n-doping and a well-developed hysteresis can be measured after irradiation. We utilize this hysteresis to demonstrate the use of the MoS2 FET as a memory device, which has remarkably longer relaxation times (≈ minutes) compared to previous works.