SKM 2023 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 59: Electronic Structure of Surfaces I
O 59.7: Vortrag
Mittwoch, 29. März 2023, 16:45–17:00, REC C 213
Bulk and surface electronic structure of tunnel barrier Nb3Br8 in the field-free Josephson diode — •Mihir Date1,2, Jonas.A. Krieger1, Emily.C. McFarlane1, Vicky Hasse3, Claudia Felser3, Stuart.S.P Parkin1, Matthew Watson2, and Niels.B.M Schröter1 — 1MPI-Halle, Weinberg 2, 06120 Halle (Saale), Germany — 2Diamond Light Source Ltd. Didcot, OX11 0DE, United Kingdom — 3MPI-CPfS, Nöthnitzer Straße 40, 01187 Dresden, Germany
In this work, we report the bulk and surface electronic structure of Nb3Br8 probed using angle resolved photoemission spectroscopy (ARPES). Nb3Br8 is predicted to host trivial metallic surface states (obstructed surface states (OSS)) when cleaved between specific layers [1]. Although our in-plane electronic structure is consistent with the calculated orbital resolved bandstructure, we do not observe any signatures of the OSS. Nevertheless, the doubling of periodicity of the ARPES signal along the out-of-plane momentum direction, as compared to the Brillouin zone dimension, hints towards dimerization between alternate layers through the OSS. We discuss our results in connection with the recent discovery of the field-free Josephson diode effect in the NbSe2/Nb3Br8/NbSe2 heterostructures [2].
[1] Xu, Y. et al. arXiv:2106.10276 (2021).
[2]. Wu, H. et al. Nature 604 (2022).