Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

O: Fachverband Oberflächenphysik

O 64: Poster: Graphene

O 64.10: Poster

Mittwoch, 29. März 2023, 18:00–20:00, P2/EG

Controlled fabrication of the graphene/Mn₅Ge₃ interface via Mn intercalation — •Vivien Enenkel¹, Yuriy Dedkov², Elena Voloshina², and Mikhail Fonin¹ — ¹Fachbereich Physik, Universität Konstanz, Universtätsstraße 10, 78457 Konstanz, Germany — ²Department of Physics, Shanghai University, 99 Shangda Road, 200444 Shanghai, China

Mn-based intermetallic compounds have recently been in focus of intensive research owing to their outstanding magnetic properties. In particular, epitaxial Mn₅Ge₃/Ge interfaces [1] are regarded to have the potential for the realization of efficient spin injection and manipulation in semiconductor structures compatible with the existing Si technology. Furthermore, for graphene on Mn₅Ge₃ an exchange splitting of the π states is predicted, with the two spin channels exhibiting a large difference in charge carrier mobility [2]. Here, we report on the fabrication of epitaxial graphene/Mn₅Ge₃ by Mn-intercalation at the graphene/Ge(110) interface, initially prepared by atomic carbon deposition on Ge(110) [3]. Depending on the sample temperature different phases can be generated, including Mn₅Ge₃, whose structure and electronic properties are studied by low-temperature scanning tunneling microscopy and spectroscopy.

[1] Y. Dedkov et al., J. Appl. Phys. 105, 073909 (2009).

[2] E. Voloshina and Y. Dedkov, J. Phys. Chem. Lett. 10, 3212 (2019).

[3] J. Tesch et al., Carbon 122, 428-433 (2017).