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O: Fachverband Oberflächenphysik
O 74: 2D Materials IV: Heterostructures (joint session O/CPP)
O 74.3: Vortrag
Donnerstag, 30. März 2023, 11:00–11:15, GER 37
Phonon gap supported tunneling and Faraday screening through graphene — •Tobias Wichmann1,2,3, Keda Jin1,2,4, Jose Martinez Castro1,4, Honey Boban5, Lukasz Plucinski5, Markus Ternes1,2,4, F. Stefan Tautz1,2,3, and Felix Lüpke1,2 — 1Peter-Grünberg-Institut (PGI-3), Forschungszentrum Jülich, 52425 Jülich, Germany — 2Jülich Aachen Research Alliance (JARA) - 52425 Jülich, Fundamentals of Future Information Technology, Germany — 3Institut für Experimentalphysik IV A, RWTH Aachen, 52074 Aachen, Germany — 4Institut für Experimentalphysik II B, RWTH Aachen, 52074 Aachen, Germany — 5Peter-Grünberg-Institut (PGI-6), Forschungszentrum Jülich, 52425 Jülich, Germany
Encapsulation of van der Waals materials has proven a vital technique to protect them from degradation and contamination. Usually, metallic encapsulation layers mask the properties of the underlying material when studied in scanning tunneling microscopy. Utilizing the inelastic tunneling phonon gap of graphene, however, enables the unfettered investigation of low energy phenomena (e.g. Kondo effect, Majoranas, etc.) by scanning tunneling spectroscopy, while maintaining the advantages of encapsulated samples. Furthermore, we find that the conductive nature of the graphene encapsulation layer screens the sample from tip-induced electric fields, exemplified by our low-temperature STM examination of encapsulated Fe3GeTe2.