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O: Fachverband Oberflächenphysik

O 74: 2D Materials IV: Heterostructures (joint session O/CPP)

O 74.8: Vortrag

Donnerstag, 30. März 2023, 12:15–12:30, GER 37

Relaxation mechanisms for in-plane heterostructures of transition metal dichalcogenide monolayers — •Kai Mehlich¹, Francis H. Davis³, Thais Chagas¹, Daniela Dombrowski², Daniel Weber¹, Catherine Grover¹, Arkady Krasheninnikov³, and Carsten Busse¹ — ¹Derpartment Physik, Universität Siegen, Walter-Flex-Str. 3, 57072 Siegen — ²Institut für Materialphysik, WWU Münster, Wilhelm-Klemm-Str. 10, 48149 Münster — ³Ion Beam Centre, Helmoltz-Zentrum Dresden Rossendorf, Bautzner Landstraße 400, 01328 Dresden

We use sequential epitaxial growth to synthesise in-plane heterostructures of MoS₂ and TaS₂ monolayers on Au(111). Even though the two materials have significantly different lattice constants, STM-measurements show that coherent interconnection of the two materials can be achieved. Defects at the interface such as dislocations are absent. We find this for all interfaces, independent of orientation or the widths of the joined materials. This is at variance with DFT-calculations where we find that the formation of dislocations is energetically favoured, at least until a critical width of the heterostructures. Our growth process can thus lead to a metastable, defect-free interface.