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O: Fachverband Oberflächenphysik
O 74: 2D Materials IV: Heterostructures (joint session O/CPP)
O 74.8: Talk
Thursday, March 30, 2023, 12:15–12:30, GER 37
Relaxation mechanisms for in-plane heterostructures of transition metal dichalcogenide monolayers — •Kai Mehlich1, Francis H. Davis3, Thais Chagas1, Daniela Dombrowski2, Daniel Weber1, Catherine Grover1, Arkady Krasheninnikov3, and Carsten Busse1 — 1Derpartment Physik, Universität Siegen, Walter-Flex-Str. 3, 57072 Siegen — 2Institut für Materialphysik, WWU Münster, Wilhelm-Klemm-Str. 10, 48149 Münster — 3Ion Beam Centre, Helmoltz-Zentrum Dresden Rossendorf, Bautzner Landstraße 400, 01328 Dresden
We use sequential epitaxial growth to synthesise in-plane heterostructures of MoS2 and TaS2 monolayers on Au(111). Even though the two materials have significantly different lattice constants, STM-measurements show that coherent interconnection of the two materials can be achieved. Defects at the interface such as dislocations are absent. We find this for all interfaces, independent of orientation or the widths of the joined materials. This is at variance with DFT-calculations where we find that the formation of dislocations is energetically favoured, at least until a critical width of the heterostructures. Our growth process can thus lead to a metastable, defect-free interface.