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O: Fachverband Oberflächenphysik

O 93: Graphene II: Electronic Structure and Growth

O 93.8: Vortrag

Freitag, 31. März 2023, 12:15–12:30, GER 37

Defective graphene by topological design — Benedikt P Klein^1,2, Matthew A Stoodley^1,2, Joel Deyerling³, Michael Clarke⁴, Luke A Rochford¹, Marc Walker², Raymundo Marcial Hernandez⁵, Christian B Nielsen⁵, Lars Sattler⁶, Sebastian M Weber⁶, Gerhard Hilt⁶, Alexander Generalov⁷, Alexei Preobrajenski⁷, Leon BS Williams^1,8, Tien-Lin Lee¹, Alex Saywell⁴, Willi Auwärter³, Reinhard J Maurer², and •David A Duncan¹ — ¹Diamond Light Source, UK — ²University of Warwick, UK — ³Technische Universität München, Germany — ⁴University of Nottingham, UK — ⁵Queen Mary University of London, UK — ⁶Carl von Ossietzky Universität Oldenburg, Germany — ⁷MAX IV, Lund, Sweden — ⁸University of Glasgow, UK

Defective graphene is a promising material for both applications in electronic devices and as substrates for modern catalysts. However, generating deliberate imperfection in graphene often relies on brute force methods, like ion sputtering. Herein, we demonstrate one-step bottom-up synthesis of defective graphene with incorporated 5- and 7-membered ring defects by using a polyaromatic feedstock that contains the same topology as the desired defect. Furthermore, the ratio of ideal to defective graphene could be controlled by the temperature used to grow the film. By a combination of X-ray standing waves, non-contact atomic force microscopy, X-ray photoelectron spectroscopy, near-edge X-ray absorption fine structure and density functional theory, we thoroughly characterise these networks and propose this method as a novel method of functionalising graphene.