SKM 2023 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
O: Fachverband Oberflächenphysik
O 94: Topology and Symmetry-Protected Materials
O 94.2: Talk
Friday, March 31, 2023, 10:45–11:00, GER 38
Electronic Structure of the Weak 3D Topological Insulator Bi12Rh3Ag6I9 — •Johannes Heßdörfer1,2, Eduardo Carillo-Aravena2,3, Armando Consiglio2,4, Maximilian Ünzelmann1, Michael Ruck2,3, Domenico Di Sante5, and Friedrich Reinert1,2 — 1Experimentelle Physik VII, Universität Würzburg, Germany — 2Würzburg-Dresden Cluster of Excellence ct.qmat, Germany — 3Anorganische Chemie II, Technische Universität Dresden, Germany — 4Theoretische Physik I, Universität Würzburg, Germany — 5University of Bologna, Italy
Weak three-dimensional (3D) topological insulators (TI) can be considered as a stack of 2D TI separated by insulating spacer layers. The first experimentally observed weak TI is Bi14Rh3I9 [1], in which the TI layers are Kagome nets formed by rhodium centered bismuth cubes. Importantly, a modification of the [Bi2I8]2− spacer layer, like e.g. by Ag-substitution, can change the coupling between the 2D-TI and with that decisively influences the topological properties. Here, we investigate Bi12Rh3Ag6I9 by means of angle-resolved photoemission experiments and density functional theory band structure calculations. In particular, we will discuss the influence of the modified spacer layer on the electronic structure and compare the results with Bi14Rh3I9 and other compounds of this family.
[1]Rasche et al., Nat. Mater, 12, 422-425 (2013)