SKM 2023 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 94: Topology and Symmetry-Protected Materials

O 94.2: Vortrag

Freitag, 31. März 2023, 10:45–11:00, GER 38

Electronic Structure of the Weak 3D Topological Insulator Bi₁₂Rh₃Ag₆I₉ — •Johannes Heßdörfer^1,2, Eduardo Carillo-Aravena^2,3, Armando Consiglio^2,4, Maximilian Ünzelmann¹, Michael Ruck^2,3, Domenico Di Sante⁵, and Friedrich Reinert^1,2 — ¹Experimentelle Physik VII, Universität Würzburg, Germany — ²Würzburg-Dresden Cluster of Excellence ct.qmat, Germany — ³Anorganische Chemie II, Technische Universität Dresden, Germany — ⁴Theoretische Physik I, Universität Würzburg, Germany — ⁵University of Bologna, Italy

Weak three-dimensional (3D) topological insulators (TI) can be considered as a stack of 2D TI separated by insulating spacer layers. The first experimentally observed weak TI is Bi₁₄Rh₃I₉ [1], in which the TI layers are Kagome nets formed by rhodium centered bismuth cubes. Importantly, a modification of the [Bi₂I₈]²⁻ spacer layer, like e.g. by Ag-substitution, can change the coupling between the 2D-TI and with that decisively influences the topological properties. Here, we investigate Bi₁₂Rh₃Ag₆I₉ by means of angle-resolved photoemission experiments and density functional theory band structure calculations. In particular, we will discuss the influence of the modified spacer layer on the electronic structure and compare the results with Bi₁₄Rh₃I₉ and other compounds of this family.

[1]Rasche et al., Nat. Mater, 12, 422-425 (2013)