DPG Phi
Verhandlungen
Verhandlungen
DPG

SKM 2023 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

TT: Fachverband Tiefe Temperaturen

TT 10: Correlated Electrons: Other Materials

TT 10.11: Vortrag

Montag, 27. März 2023, 17:45–18:00, HSZ 204

Single crystal growth, structural and transport properties of the Mott insulator BaCoS2 — •Haneen Abushammala, Teslin Thomas, Andreas Kreyssig, and Anna Böhmer — Institute for Experimentalphysik IV, Ruhr-Universität Bochum, Universitätsstrasse 150, 44801 Bochum, Germany.

The quasi-2D BaCoS2 is a Mott insulator with a stripe-like antiferromagnetic ordering at TN=290 K. Both chemical doping or hydrostatic pressure drive the system into a paramagnetic metallic phase. Interestingly, there is no structural transition at the metal-insulator transition of this phase, which offers ideal conditions to investigate the Mott transition in a model multiband system [1].

Nevertheless, BaCoS2 remains little studied, and the interplay of electronic and structural features is still unclear. High-quality single crystals are needed to elucidate this issue. The synthesis of single-crystalline BaCoS2 is challenging owing to its metastability, with a decomposition into Ba2CoS3, CoS and S below 850C. The BaCoS2 phase can only be obtained via quenching from high temperature. Moreover, BaCoS2 melts incongruently, which calls for a flux growth method necessitating separation of the crystals from the flux by the end of the growth. We have successfully grown single crystals of pure and the hole-doped BaCoS2 using a self-flux method with high-temperature flux separation and quench. The structural and anisotropic electrical transport properties are determined and discussed.
[1] H. Abushammala, B. Lenz, B. Baptiste, M. Casula, Y. Klein and A. Gauzzi, in preparation (2022).

100% | Mobil-Ansicht | English Version | Kontakt/Impressum/Datenschutz
DPG-Physik > DPG-Verhandlungen > 2023 > SKM