SKM 2023 – wissenschaftliches Programm

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TT: Fachverband Tiefe Temperaturen

TT 11: Spintronics, Spincalorics and Magnetotransport

TT 11.6: Vortrag

Montag, 27. März 2023, 16:15–16:30, HSZ 304

Gate-tunable insulator-metal transition and weak antilocalization in two-dimensional tellurium — •Dorsa Fartab¹, José Guimarães^1,2, Marcus Schmidt¹, and Haijing Zhang¹ — ¹Max Planck Institute for Chemical Physics of Solids, 01187 Dresden, Germany — ²School of Physics and Astronomy, University of St Andrews, St Andrews KY16 9SS, UK

Charge carrier density control is a key factor to modify the electronic functionality of materials. The ability to induce high charge carrier concentration into various two-dimensional materials has led to exotic phenomena such as insulator-metal transition and superconductivity. So far, different techniques have been used to achieve this. Meanwhile, electric double layer transistor (EDLT) is a highly promising platform as it can provide high charge carrier density of up to 10¹⁵ cm⁻² in its channel material. This is two orders of magnitude larger than that in the conventional transistors as a result of using ionic liquids instead of common solid dielectrics. First, I will give a short overview on the EDLTs, then I will present our experimental results of ionic liquid gated two-dimensional tellurium (Te). Our results show the possibility of gate tuning insulator-metal phase transition and the gate and temperature-dependent weak antilocalization in p-type Te films. More interestingly, we have shown the ability of controlling the spin-orbit interaction in the material by changing the applied gate voltage.