SKM 2023 – wissenschaftliches Programm

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TT: Fachverband Tiefe Temperaturen

TT 24: Quantum Dots: Transport (joint session HL/TT)

TT 24.7: Vortrag

Dienstag, 28. März 2023, 11:30–11:45, POT 151

Electron transport through a quantum dot in controlled heat bath environment — •Hatef Ghannadi maragheh, Johannes C. Bayer, and Rolf J. Haug — Institute for Solid State Physics, Leibniz Universität Hannover, Appelstraße 2, 30167 Hannover, Germany

For optimizing any device, amongst them semiconductor-based qubit, one has to understand the effects of the environment on them. In this sort of devices, not just quantum states of the channel but also the state of the particles is affected [1-3]. The device consists of split-gate quantum dot in a GaAs/AlGaAs heterostructure. The temperature of the measurement ranged from 49.9 mK to 800 mK.

There have been several works on explaining how electron transport through the quantum dot system would behave for different temperatures [4-5]. As the temperature changes, the Fermi distribution of the lead*s changes. This influenced the conductivity of the dot since in the presence of the bias voltage the transport window gets altered. Besides, depending on the presence of energy levels in the transfer window, the conductivity is manipulated by changing the temperature. For low temperatures, due to the local density of states and coupling of the barrier gates to the leads, fluctuations start to emerge.

[1]*K. C. Nowack et al, Science 318, 1430-1433 (2007)

[2]*Pioro-Ladrière, et al, Nature Physics 4, 776*779 (2008)

[3]*Jan K Kühne, et al, physica status solidi (b) 256(6) (2019)

[4]*E. B. Foxman, et al, Phys. Rev. B 47, 10020(R) (1993)

[5]*O. Dani, et al, Communications Physics 5 (1), 1-7 (2022)