SKM 2023 – scientific programme

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TT: Fachverband Tiefe Temperaturen

TT 37: Ruthenates

TT 37.7: Talk

Wednesday, March 29, 2023, 16:45–17:00, HSZ 201

Gate-controlled superconductivity in Sr₂RuO₄ — •Priyana Puliyappara Babu¹, Roman Hartmann¹, Rosalba Fittipaldi², Antonio Vecchione², Elke Scheer¹, and Angelo Di Bernardo¹ — ¹University of Konstanz, 78457 Konstanz, Germany — ²University of Salerno, I-84084 Fisciano, Italy

The electrical field effect was believed to be inapplicable for superconductors until 2018 when it was found that the supercurrent I_c in nanowires can be controlled by the application of strong enough voltages to gate electrodes, which has been interpreted as field effect. This discovery has great potential in the future to build hybrid superconductor/semiconductor architectures which might serve reducing the increasing energy demands of modern supercomputers. The majority of observations of such gate effects have been made for BCS superconductors like Ti, Va, Nb, Al etc. Here we report gate control of I_c in transistors made of Sr₂RuO₄ flakes. Sr₂RuO₄ is an unconventional superconductor found in 1994 which has been intensively studied to understand the nature of its superconducting order parameter. Single crystals of Sr₂RuO₄ were mechanically exfoliated to produce flakes which were then patterned into gated nanodevices using a gallium focused ion beam. Total suppression of I_c was observed for gate voltages V_G above 8.3 V. The V_G dependence of I_c at different temperatures and different fields were also investigated. We will also discuss the role of leakage currents between wire and gate and possibilities to further minimize them.