SKM 2023 – wissenschaftliches Programm

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TT: Fachverband Tiefe Temperaturen

TT 4: f-Electron Systems and Heavy Fermions I

TT 4.7: Vortrag

Montag, 27. März 2023, 11:00–11:15, HSZ 201

Single crystal growth of EuPd₂Si₂ under enhanced gas pressure — •Alexej Kraiker, Marius Peters, Kristin Kliemt, and Cornelius Krellner — Physikalisches Institut, Goethe Universität Frankfurt, 60438 Frankfurt am Main, Germany

The study of collective phenomena raising from enhanced coupling between electrons and phonons is focussed on materials exhibiting phase transitions involving both, electronic and lattice-degrees of freedom. One system providing such a strongly coupled phase transition is EuPd₂Si₂ crystallizing in the ThCr₂Si₂ structure type. Because of the the high vapor pressure of Eu, high-quality single crystals of EuT₂X₂-compounds are very challenging to grow in larger size. One way to prevent Eu from evaporating out of the melt, is growing the crystals in argon overpressure. In this contribution, we present the crystal growth of EuPd₂Si₂ single crystals with a 20 bar and a 150 bar Czochralski-furnace. We show that the argon overpressure slows down the evaporation process of the Eu and leads to crystals with higher quality compared to Bridgman grown samples [1].
[1] K. Kliemt at al. Cryst. Growth Des. 2022, 9, 5399