SKM 2023 – wissenschaftliches Programm

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TT: Fachverband Tiefe Temperaturen

TT 57: Poster: Superconductivity I

TT 57.2: Poster

Donnerstag, 30. März 2023, 15:00–18:00, P2/OG2

Demonstration of 300 mm CMOS-compatible superconducting HfN and ZrN thin films — •Roman Potjan^1,3, Raik Hoffmann¹, Marcus Wislicenus¹, Benjamin Lilienthal-Uhlig¹, and J. Wosnitza^2,3 — ¹Fraunhofer Institute for Photonic Microsystems (IPMS), Center Nanoelectronic Technologies (CNT), Dresden, Germany — ²Hochfeld-Magnetlabor Dresden (HLD-EMFL), HZDR, Dresden, Germany — ³Institut für Festkörper- und Materialphysik, TU Dresden, Germany

The increasing interest in quantum computing is pushing the development of new superconducting materials for semiconductor fab process technology. However, these are often facing CMOS process incompatibility. In contrast to common CMOS materials such as TiN and TaN, reports on the superconductivity of other suitable transition-metal nitrides are scarce, despite potential superiority. Hence, we demonstrate fully CMOS-compatible fabrication of HfN and ZrN thin films on state-of-the-art 300 mm semiconductor process technology, employing reactive DC magnetron sputtering on silicon wafers. Mechanical stress, thickness, and roughness measurements of the thin films imply process compatibility. Material phase and stoichiometry in bulk and interfaces are investigated by structural analysis. HfN and ZrN exhibit transitions into the superconducting state with critical temperature up to 5.1 and 6.1 K, respectively. A decrease in critical temperature with decreasing film thickness indicates geometric limitations and proximity effects of the interfaces. The results prepare a scalable application of HfN and ZrN in quantum computing and related applications.