SKM 2023 – wissenschaftliches Programm

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TT: Fachverband Tiefe Temperaturen

TT 7: Spin Transport and Orbitronics, Spin-Hall Effects (joint session MA/TT)

TT 7.5: Vortrag

Montag, 27. März 2023, 10:30–10:45, HSZ 403

Quantification and modulation of intrinsic spin transport in 5d transition metals — •Akash Bajaj, Reena Gupta, Andrea Droghetti, and Stefano Sanvito — School of Physics and CRANN, Trinity College Dublin, Dublin 2, Ireland

Spin-Hall effect (SHE) enables charge-to-spin conversion in heavy transition metals, such as Ta and Pt, with strong spin-orbit coupling (SOC) strengths. It has been extensively studied as a viable mechanism for the development of next-generation spintronics-based non-volatile memory devices. Numerous experimental and first-principles approaches have been devised to quantify the charge-to-spin conversion efficiency i.e., the spin-Hall angle (SHA), for the SHE. However, such approaches unavoidably involve interface contributions and, in general, extrinsic effects such as disorder and impurities, which are known to be less dominant than the bandstructure-only intrinsic contribution in such heavy metals. In this work, we use density functional theory combined with a bond-current-based non-equilibrium Green's functions approach to quantify the intrinsic SHAs of bulk elemental and thin-film models of 5d transition metals. We then computationally demonstrate a strategy for modulating the SHA within the same device, using Pt and Au as contrasting examples. Our computational work not only provides a quantitative estimation of the intrinsic SHAs for these materials, but also enables its theoretical understanding aimed towards the development of higher performance and power-efficient spintronics-based non-volatile memory devices.