SMuK 2023 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

P: Fachverband Plasmaphysik

P 9: Atmospheric Pressure Plasmas and their Applications III

P 9.2: Vortrag

Mittwoch, 22. März 2023, 11:30–11:45, CHE/0089

Kinetic modeling of the charge transfer across a negatively biased semiconducting plasma-solid interface — Kristopher Rasek, •Franz Xaver Bronold, and Holger Fehske — Institut für Physik, Universität Greifswald, 17489 Greifswald

We discuss the selfconsistent ambipolar charge transfer across a negatively biased semiconducting plasma-solid interface using a thin germanium layer with electron-phonon scattering sandwiched between an Ohmic contact and a collisionless argon plasma as a model system. The current-voltage characteristics of the interface is obtained from the distribution functions of the charge carriers on both sides of it. Due to quantum-mechanical reflection at the interface and collisions inside the solid, the characteristics differs substantially from the one obtained for a perfectly absorbing interface. The electron microphysics inside the solid affects thus the characteristics. In addition, the spatially and energetically resolved fluxes and charge distributions inside the germanium layer visualize the behavior of the charge carriers responsible for the charge transport. Albeit not quantitative, because of the crude model for the germanium band structure and the neglect of particle-nonconserving scattering processes, such as impact ionization and electron-hole recombination, which at the energies involved cannot be neglected, our results [1] clearly indicate (i) the current through the interface is carried by rather hot carriers and (ii) the perfect absorber model, often used for the description of charge transport across plasma-solid interfaces, cannot be maintained for semiconducting interfaces. [1] K. Rasek et al., Phys. Rev. E 105, 045202 (2022).