SMuK 2023 – wissenschaftliches Programm
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T: Fachverband Teilchenphysik
T 123: Pixel/Belle II, Si/Other
T 123.4: Vortrag
Donnerstag, 23. März 2023, 16:35–16:50, REC/C213
Investigation of high resistivity p-type FZ silicon diodes after 60Co - γ irradiation — •Chuan Liao1, Eckhart Fretwurst1, Erika Garutti1, Joern Schwandt1, Anja Himmerlich2, Yana Gurimskaya2, Michael Moll2, and Ioana Pintilie3 — 1Institute of Experimental Physics University of Hamburg, Hamburg, Germany — 2European Organization for Nuclear Research (CERN), Geneva, Switzerland — 3National Institute of Materials Physics, Bucharest, Romania
In this work, the macroscopic (I-V, C-V) and microscopic Thermally Stimulated Current (TSC) measurements were used to investigate the radiation effects in high resistivity p-type FZ silicon diodes induced by 60Co γ-rays with dose values between 1×105 and 2×106 Gy. Two different types of diodes were manufactured using either p-stop or p-spray isolation between the pad and the guard-ring. The leakage current density development with dose was investigated and compared to standard float zone (FZ) n-type diodes. Frequency dependence of capacitance-voltage characteristics was only observed for p-stop diodes and showed a strong dose dependence. In the microscopic measurements, the development of radiation-induced defects (BiOi, CiOi, VO, IP) with dose will be presented. To understand the thermal stability of these defects, isochronal annealing experiments from 80 oC up to 300 oC for 15 min were performed. The corresponding macroscopic and microscopic measurements will be presented and discussed.