SMuK 2023 – wissenschaftliches Programm

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T: Fachverband Teilchenphysik

T 148: Si/SiPM, Pixel/Other

T 148.4: Vortrag

Donnerstag, 23. März 2023, 18:15–18:30, WIL/C307

Characterization of a Digital Silicon Photomultiplier — •Gianpiero Vignola^1,2, Inge Diehl¹, Doris Eckstein¹, Finn Feindt¹, Ingrid-Maria Gregor^1,2, Karsten Hansen¹, Stephan Lachnit¹, Frauke Poblotzki¹, Simon Spannagel¹, and Tomas Vanat¹ — ¹DESY, Hamburg, Germany — ²Universität Bonn, Bonn, Germany

Silicon photomultipliers (SiPM) are increasingly used in high-energy physics, medical and commercial applications. Until now, most SiPMs are implemented as large arrays of Single Photon Avalanche Diodes (SPAD) in a parallel circuit, serving as photon counters. Recently, the possibility of using SPADs produced in commercial Complementary Metal-Oxide Semiconductor (CMOS) processes has opened up the possibility of combining their excellent performance in single photon detection and timing, with the possibilities offered by monolithic circuitry at a relatively low cost. The digital SiPMs, thanks to the per-pixel CMOS circuitry, extend the properties of standard SiPMs with features such as detailed event hit map, masking of noisy SPADs and in-chip trigger logic and digitalisation.

A prototype of a SPAD array with per-pixel CMOS circuitry was fully developed at DESY in a 150 nm CMOS technology offered by LFoundry. This talk will report the results of characterisations performed on the prototype in the laboratory and in the DESY II Test Beam facility. Studies on Dark Count Rate, MIPs detection efficiency and time resolution will be presented; along with an overview of planned future studies with a laser setup and scintillator coupling.