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T: Fachverband Teilchenphysik
T 96: TestBeam, RadHard for Si and Pixel
T 96.3: Talk
Wednesday, March 22, 2023, 18:00–18:15, WIL/C307
A High-Precision Irradiation Site for Silicon Pixel Detectors — •Pascal Wolf1, Reinhard Beck2, Jochen Dingfelder1, and Dennis Sauerland2 — 1Physikalisches Institut, University of Bonn, Germany — 2Helmholtz-Institut für Strahlen- und Kernphysik, University of Bonn, Germany
An irradiation site for radiation hardness studies of silicon pixel detectors is in operation at the isochronous cyclotron at the University of Bonn. The accelerator provides protons as well as other light ions with energies ranging from 7 to 14 MeV per nucleon and beam currents of up to 1 µA to the setup. Devices Under Test (DUTs) are irradiated in a temperature-controlled box, minimizing annealing, while being moved through the beam in a well-defined pattern, ensuring homogeneity. On-site beam diagnostics facilitate online monitoring of the beam parameters and enable a beam-driven irradiation procedure resulting in highly uniform damage profiles with relative uncertainties of typically 2%. The setup provides extensive data acquisition, visualization and control of all components allowing for flexible irradiation plans (DUT powering & R/O, pausing, etc.), post-irradiation corrections and precise damage analysis. In this talk, the irradiation site and its operational parameters are introduced in detail. Energy simulations for light ions are presented, showing the total ionizing dose (TID) as well as non-ionizing energy loss (NIEL) damage capabilities. Measurements of the applied particle fluence, using different techniques, are presented and their precisions are compared. Furthermore, an overview of the recently performed irradiation campaigns is given.