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CPP: Fachverband Chemische Physik und Polymerphysik
CPP 18: Organic Electronics and Photovoltaics I
CPP 18.5: Vortrag
Dienstag, 19. März 2024, 10:45–11:00, H 0110
Asymmetry of Charge Carrier Properties: Effects on Performance of p- and n-channel Organic Field-Effect Transistors — •Yurii Radiev1, Tobias Wollandt2, Hagen Klauk2, and Gregor Witte1 — 1Philipps-Universität Marburg, Renthof 7, 35037 Marburg, Germany — 2Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, 70569 Stuttgart, Germany
To leverage the full potential of the electronics based on organic field-effect transistors (OFETs), both p- and n-channel devices of similar performance are required [1]. While p-type organic semiconductors (OSCs) have been long known, environmentally stable OSCs for high-performance n-type OFETs have been synthesized only recently [2]. The analysis of such OFETs revealed that the asymmetry of the charge carrier properties limited the use of n-channel devices: large injection barriers and high susceptibility to trap states significantly reduced the device performance. The contact resistance in particular has been gaining more attention recently, since with high charge carrier mobilities the limiting factor for high-frequency device applications becomes the charge carrier injection at the OSC-electrode interface. In this work we compare various p- and n-channel OFET device structures (based on pentacene, DNTT and PhC2-BQQDI, respectively) to demonstrate the effects of the charge carrier properties asymmetry on the device performance and to discuss the ways to alleviate them [3].
[1] Klauk, H., et al., Nature 2007, 445 (7129), 745-748.
[2] Okamoto, T., et al., Science Advances 2020, 6 (18), eaaz0632.
[3] Radiev, Y., et al., Organic Electronics 2021, 89, 106030.
Keywords: organic field-effect transistor; hopping transport; charge carrier mobility; charge carrier trapping; contact resistance