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CPP: Fachverband Chemische Physik und Polymerphysik
CPP 49: Organic Electronics and Photovoltaics IV
CPP 49.1: Vortrag
Freitag, 22. März 2024, 09:30–09:45, H 0107
Interfacial engineering via modifications of the electron blocking layer in PbS quantum dot solar cells — •Huaying Zhong1, Timo Piecuch1, Wei Chen2, and Peter Müller-Buschbaum1,3 — 1TUM School of Natural Sciences, Chair for Functional Mateials, 85748 Garching, Germany — 2SZTU, College of Engineering Physics, Shenzhen 518118, China — 3TUM, MLZ, 85748 Garching
Colloidal quantum dot solar cells (CQDSC) have received tremendous attention as next generation solar cells. Best performances up to 15% power conversion efficiency (PCE) have been achieved using lead sulfide QDs in a heterojunction cell architecture . PbS CQDs are especially efficient in the infrared region, and thus particular interesting for niche applications like space satellites. Research in the last years mainly has focused on improving the absorber layer and the hole blocking layer, but the potential by improving the electron blocking layer (EBL) has recently aroused increasing interest. In order to reduce interfacial charge carrier recombination and capture large fraction of long wavelength photons at the EBL/active layer interface , the different interfacial energy-level offsets between EBL and absorber layer via tuning the QDs size of EBL are investigated using ultraviolet photoelectron spectroscopy (UPS) and absorption spectroscopy. Furthermore, the corresponding photovoltaic performances are characterized to demonstrate improved interfacial band alignment.
Keywords: electron blocking layer; interfacial engineering