Berlin 2024 – scientific programme
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DS: Fachverband Dünne Schichten
DS 1: Thin Oxides and Oxide Layers (joint session DS/KFM)
DS 1.3: Talk
Monday, March 18, 2024, 10:00–10:15, A 053
Electronic Reconstruction and Anomalous Hall Effect in the LaAlO3/SrRuO3 Heterostructure — •Merit Spring1,2,3, Ji Soo Lim1,2, Martin Kamp1,4, Matthias Schmitt1,2,3, Deepnarayan Biswas3, Louis Veyrat5, Pavel Potapov5, Axel Lubk5, Bernd Büchner5, Tien-Lin Lee3, Michael Sing1,2, and Ralph Claessen1,2 — 1Physikalisches Institut, Würzburg, GER — 2Würzburg-Dresden Cluster of Excellence ct.qmat — 3Diamond Lightsource Ltd., Didcot, UK — 4Wilhelm Conrad Röntgen-Center for Complex Material Systems, Universität Würzburg, GER — 5Leibnitz Institute for Solid State and Materials Research, Dresden, GER
For the LaAlO3/SrRuO3 (LAO/SRO) system a similar electronic reconstruction to that of LaAlO3/SrTiO3 (LAO/STO) is expected, and charge is thought to be accumulated at the very interface giving rise to strong inversion-symmetry breaking and causing a topological transition of the electronic bands [1]. We show that the LAO capping drives the SRO, which turns insulating below 8 unit cells (uc) without capping, (deeper) into the metallic regime. Furthermore, we find not only signatures of an anomalous Hall effect (AHE) in 4 uc SRO films capped with LAO, but also an inversion of the sign of the AHE, when the 4uc SRO is replaced by metallic 10 uc of SRO indicating the topological phase transition. Moreover, we correlate these findings with hard and soft x-ray photoemission spectroscopy data, that show changes in the ruthenium electronic states, and discuss these changes in terms of correlated electrons. [1] Thiel, T. C. et al., Phys. Rev. Lett. 127, 127202 (2021)
Keywords: Anomalous Hall Effect; Photoelectron Spectroscopy; Topology