Berlin 2024 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
DS: Fachverband Dünne Schichten
DS 10: Thin Film Application
DS 10.11: Vortrag
Mittwoch, 20. März 2024, 17:45–18:00, A 060
Non-volatile electro-thermal memristive behavior in planar NdNiO3 thin film devices — •Farnaz Tahouni-Bonab1, Matthias Hepting2, Theodor Luibrand1, Georg Cristiani2, Gennady Logvenov2, Bernhard Keimer2, Dieter Koelle1, Reinhold Kleiner1, and Stefan Guénon1 — 1Physikalisches Institut, Center for Quantum Science (CQ) and LISA+, Eberhard Karls Universität Tübingen, 72076 Tübingen, Germany — 2Max Planck Institute for Solid State Research, Heisenbergstraße 1, 70569 Stuttgart, Germany
Memristive two-terminal devices are heavily investigated in the emerging field of neuromorphic computing as building blocks for artificial neural network hardware, particularly for storing the synaptic weights via non-volatile resistive switching. Here, we report on a non-volatile electro-thermal memristive effect in a planar NdNiO3 (7 nm thick) thin-film device due to its characteristic thermodynamic properties. This behavior was investigated by electrical transport measurement and simultaneous optical imaging. We found resistive switching via multiple persistent states, which can be directly related to the spatial geometry of the metallic shunt. These results can be understood by considering the electro-thermal instability caused by the resistance vs. temperature dependence.
Keywords: neuromorphic computing; memristive systems; electro-thermal instability; strongly correlated insulators; nickelates