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DS: Fachverband Dünne Schichten

DS 10: Thin Film Application

DS 10.11: Talk

Wednesday, March 20, 2024, 17:45–18:00, A 060

Non-volatile electro-thermal memristive behavior in planar NdNiO₃ thin film devices — •Farnaz Tahouni-Bonab¹, Matthias Hepting², Theodor Luibrand¹, Georg Cristiani², Gennady Logvenov², Bernhard Keimer², Dieter Koelle¹, Reinhold Kleiner¹, and Stefan Guénon¹ — ¹Physikalisches Institut, Center for Quantum Science (CQ) and LISA⁺, Eberhard Karls Universität Tübingen, 72076 Tübingen, Germany — ²Max Planck Institute for Solid State Research, Heisenbergstraße 1, 70569 Stuttgart, Germany

Memristive two-terminal devices are heavily investigated in the emerging field of neuromorphic computing as building blocks for artificial neural network hardware, particularly for storing the synaptic weights via non-volatile resistive switching. Here, we report on a non-volatile electro-thermal memristive effect in a planar NdNiO₃ (7 nm thick) thin-film device due to its characteristic thermodynamic properties. This behavior was investigated by electrical transport measurement and simultaneous optical imaging. We found resistive switching via multiple persistent states, which can be directly related to the spatial geometry of the metallic shunt. These results can be understood by considering the electro-thermal instability caused by the resistance vs. temperature dependence.

Keywords: neuromorphic computing; memristive systems; electro-thermal instability; strongly correlated insulators; nickelates