Berlin 2024 – scientific programme
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DS: Fachverband Dünne Schichten
DS 10: Thin Film Application
DS 10.1: Talk
Wednesday, March 20, 2024, 15:00–15:15, A 060
Investigation of interfacial spin transport in chiral RhSi epitaxial thin films — •Surya Narayan Panda1, Edouard Lesne1, Qun Yang1, Anastasios Markou2, Binghai Yan3, and Claudia Felser1 — 1Max Planck Institute for Chemical Physics of Solids, Nöthnitzer Str. 40, 01187 Dresden, Germany — 2University of Ioannina, Greece — 3Weizmann Institute of Science, Israel
The rise of nonmagnetic chiral topological semimetals as a uniquely attractive playground for the observation and control of various spin-orbit effects has ushered in the promising field of topological spintronics. In this work, we have investigated the spin-to-charge interconversion through spin pumping and inverse-spin Hall effect(ISHE) in sputter-grown epitaxial RhSi thin films and its subsequent transport across RhSi/Py interface. From the observed modulation of Gilbert damping parameter and ISHE voltage with RhSi thickness, the spin-Hall angle of RhSi and interfacial spin transparency of RhSi/Permalloy interface is determined. A stark variation of spin Hall angle and interfacial spin transparency is observed with ambient temperature in this heterostructure. The spin Hall angle and spin Hall conductivity is found to be maximum of 1.4% and 252 (ℏ/e) Ω^(-1) cm^(-1), respectively. A spin-mixing conductance and interfacial spin transparency as high as 34.7 nm-2 and 88% is attainable in these heterostructures. This study expands the horizon of topological spintronics and highlights the controlled spin-charge interconversion and interfacial spin-transport process in chiral semimetal/ferromagnet heterostructures.
Keywords: Chiral semimetal; Ferromagnetic resonance; Gilbert damping; Spin-Hall angle; Spin-mixing conductance