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DS: Fachverband Dünne Schichten

DS 10: Thin Film Application

DS 10.9: Talk

Wednesday, March 20, 2024, 17:15–17:30, A 060

Growth study of β-Ga2O3 on Ru(0001) substrates for resistive switching applications — •Aman Baunthiyal, Martin Williams, Alexander Karg, Marco Schowalter, Thorsten Mehrtens, Martin Eickhoff, Andreas Rosenauer, Jon-Olaf Krisponeit, and Jens Falta — Institute of Solid State Physics, University of Bremen, Germany

β-Ga2O3 is in demand for high-power electronics, sensors, and UV devices. While Al2O3 and AlN are common substrates, this study aims for a metallic substrate serving as bottom electrode in vertically stacked resistive switching (RS) devices [1]. Here, we utilize Ru, which is also considered a promising replacement for Cu interconnects in CMOS technology due to its stable resistivity at high temperatures and excellent electromigration resistance.

After sputter deposition of Ru(0001) on Al2O3(0001) substrates at 450 C, the subsequent growth of Ga2O3 was systematically studied with respect to growth temperature (room temperature to 600 C) and film thickness. Raman spectroscopy unveiled that the growth of β-Ga2O3 growth starts at 200C. Atomic force microscopy revealed an initial increase in roughness up to 400 C and indicates a transition to a two-dimensional growth mode in the upper-temperature range. Finally, RS devices were created by deposition of Al top electrodes, featuring excellent stability with a consistent ON/OFF ratio exceeding >104 over extended retention and endurance cycles.

[1] Baunthiyal et al., Appl. Phys. Lett. 123, 213504 (2023).

Keywords: Resistive switching; 𝛽-Ga2O3; RF Sputtering; Non-volatile memories; Metal oxide growth

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