Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
DS: Fachverband Dünne Schichten
DS 11: Poster I (joint session DS/MM/O)
DS 11.12: Poster
Mittwoch, 20. März 2024, 17:00–19:00, Poster B
Growth of Sc(x)Ga(1-x)N on 6H-SiC by plasma assisted molecular beam epitaxy — •Fabian Ullmann1,2, Abdul Qadir Shahbaz1,2, and Stefan Krischok1,2 — 1TU Ilmenau, Ehrenbergstraße 29, 98693 Ilmenau — 2Zentrum für Mikro- und Nanotechnologie, Gustav-Kirchhoff-Straße 7, 98693 Ilmenau
ScGaN can occur in various crystal orientations. The most important are wurtzite and rock salt formation. Depending on the scandium concentration, a phase transition can be found between these orientations. Plasma-assisted molecular beam epitaxy (PAMBE) in combination with reflective high-energy electron diffraction (RHEED) was performed to create layers with different scandium concentrations in ScGaN. To determine the concentration of the grown layers, X-ray photoelectron spectroscopy was used in the same vacuum chamber. In addition, the surfaces were analyzed using atomic force microscopy (AFM, in-situ) and scanning electron microscopy (SEM) to obtain information on the morphology of the surfaces and to confirm the gained crystal orientations X-ray diffraction (XRD) were performed.
Keywords: ScGaN; MBE; Scandium; Gallium; XPS