Berlin 2024 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

DS: Fachverband Dünne Schichten

DS 11: Poster I (joint session DS/MM/O)

DS 11.15: Poster

Mittwoch, 20. März 2024, 17:00–19:00, Poster B

Growth of Antimony thin films on c-plane Sapphire — •Jonathan Spelsberg, Alexander Fuhrich, and Martin Salinga — Institut für Materialphysik, Universität Münster, Wilhelm-Klemm-Str. 10, 48149 Münster

Antimony has been demonstrated to function as a single-element phase change material for electronic memory applications [1]. Confinement into nanostructures is crucial for stabilizing the amorphous phase of this material that is otherwise known for its fast crystallization kinetics. Yet, the exact influence of interfacing dielectrics on the physical properties of Antimony requires a fundamental investigation. To this end, samples with a well-controlled interface are required. Here, we report about the growth of Antimony thin films on c-plane Sapphire by molecular beam epitaxy. Based on characterization with RHEED and AFM, we demonstrate the impact of substrate preparation and process temperatures on the growth of 3 nm to 30 nm thick antimony films. Moreover, we discuss the relevance of Antimony cluster size and the effective use of a cracker effusion cell.

[1] M.Salinga et al., Monatomic phase change memory, Nature Materials 17, p. 681-685 (2018)