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DS: Fachverband Dünne Schichten
DS 2: 2D Materials and their Heterostructures I: hBN, WSe2, MoS2
DS 2.1: Talk
Monday, March 18, 2024, 09:30–09:45, A 060
Strain activation of negatively charged boron vacancies in hexagonal boron nitride — •Xuankai Zhou1, Jianpei Geng2, Ruoming Peng1, and Jörg Wrachtrup1 — 13. Physikalisches Institut, University of Stuttgart, Pfaffenwaldring 57, 70569, Stuttgart, Germany — 2School of Physics, Hefei University of Technology, Hefei 230009, China
Spin defects in 2-dimensional materials have been extensively investigated since they offer a new playground for novel quantum phenomena, with improved scalability in device fabrication and the ability to study field and strain modulation. Negatively charged boron vacancy in hexagonal boron nitride (hBN) has been identified as an optically activated spin defect, hosting spin-1 ground states for quantum sensing. However, the emitted light from implanted boron vacancies tends to be dim, limiting their sensitivity. In this study, we made an important observation that the brightness of VB− is substantially enhanced when these vacancies are situated within the wrinkles and dislocations of hBN. Specifically, for hBN with a thickness of approximately 10 nm, we observed a remarkable increase of more than an order of magnitude in emission brightness, combined with an improved Optically Detected Magnetic Resonance (ODMR) contrast. Our findings shed light on the modulation of excited-state symmetry and the dynamics of underlying intermediate states in hBN induced by local strain and structure dislocation.