Berlin 2024 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 2: 2D Materials and their Heterostructures I: hBN, WSe2, MoS2

DS 2.9: Vortrag

Montag, 18. März 2024, 11:45–12:00, A 060

Large-area epitaxial growth and investigation of Fe_5−xGeTe₂/WSe₂ van der Waals heterostructures — •Hua Lv¹, Michael Hanke¹, Jens Herfort¹, Achim Trampert¹, Roman Engel-Herbert¹, Chen Chen², Joan Redwing², Manfred Ramsteiner¹, and J Marcelo Lopes¹ — ¹Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Berlin, Germany — ²Department of Materials Science and Engineering, The Pennsylvania State University, Pennsylvania, United States

Van der Waals heterostructures (vdWH) consisting of two-dimensional ferromagnets and transition metal dichalcogenides have attracted great interests due to their promising (opto)spintronic applications. The Fe_5−xGeTe₂ (FGT, with x ∼ 0.2) is considered as one of the most promising materials due to its high-temperature ferromagnetic order and robust perpendicular magnetic anisotropy (PMA). We report on the large-area MBE growth of FGT on CVD-grown WSe₂/Al₂O₃(0001). The structural characterizations reveal the high-quality formation of FGT/WSe₂ vdWH. The anomalous Hall effect (AHE) exhibits a clear hysteresis loop below 250 K providing evidence for PMA. The S-shaped AHE at higher temperatures indicates a magnetic order up to 360 K. Further magnetotransport anomaly can be explained by the formation of skyrmions accompanied by a topological Hall effect and a non-colinear magnetic order contribution to the magnetoresistance. Our results demonstrate the extraordinary potential of high-quality FGT/WSe₂ vdWH for tailoring proximity-induced phenomena that can be exploited for (opto)spintronic applications.

Keywords: 2D ferromagnets; van der Waals heterostructures; perpendicular magnetic anisotropy; topological Hall effect; (opto)spintronics