Berlin 2024 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
DS: Fachverband Dünne Schichten
DS 20: Poster II
DS 20.11: Poster
Thursday, March 21, 2024, 18:00–20:30, Poster D
2D Layer MOCVD Growth of GaS on Sapphire: Insights on the Mechanism using TPD, AES and XPS — •Stefan Renato Kachel1,2, Robin Günkel2, Leonard Neuhaus1, Johannes Glowatzki2, Lukas Erlemeier1, Kassandra Zoltner1, Florian Münster1, Carsten von Hänisch1, Kerstin Volz2, and J. Michael Gottfried1 — 1Department of Chemistry, Philipps-Universität Marburg, Germany — 2Material Sciences Center and Department of Physics, Philipps-Universität Marburg, Germany
The utilization of 2D layers of GaS with its ultraviolet bandgap holds promise for applications in solar-blind photodiodes and LEDs. However, the growth of these 2D layers poses a significant challenge, resulting in the formation of 3D Ga droplets covered by GaS instead of the desired single layers. There is a keen interest in understanding the growth mechanism of the metal-organic chemical vapor deposition (MOCVD) process to achieve a high yield of 2D layers. This study focuses on investigating the growth of the precursors di-tert-butylsulfide (DTBS), tri-tert-butylgallium (TTBGa), and the single-source precursor diethylgallium-2-(ethylthio)ethane-1-thiolate (DEGEET) on sapphire. In the absence of Ga atoms on the sapphire surface, DTBS desorbs intact without forming S layers or replacing substrate oxygen. Conversely, TTBGa allows the deposition of Ga atoms, even at significantly lower temperatures than those commonly used in MOCVD processes. DEGEET enables the deposition of thin layers of Ga and S on the sapphire surface at low temperatures. Refining such single-source precursors could pave the way to growing 2D GaS.
Keywords: TPD; XPS; MOCVD; GaS; Growth Mechanism