Berlin 2024 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
DS: Fachverband Dünne Schichten
DS 20: Poster II
DS 20.14: Poster
Thursday, March 21, 2024, 18:00–20:30, Poster D
Investigation of the atomic arrangement of ultra thin MVB films using LEED-IV — •Maximilan Buchta1, Peter Kerres1, Christoph Ringkamp1, and Matthias Wuttig2 — 1Forschungszentrum Jülich — 2RWTH Aachen
The metavalent bond (MVB) is a newly proposed type of bond, that is fundamentally different from the ionic, metallic or covalent bonds. For many materials that possess MVB, like sesquichalcogenides, mono-chalcogenides or pnictogens (e.g., Sb2Te3, GeTe or Bi) the atomic arrangement within the unit cell significantly changes with increasing film thickness. Ex-situ techniques like X-ray diffraction (XRD) can easily determine the atomic arrangement for films above 3 nm. Yet, alternatives are needed for thinner films. Emerging from the need to measure the effects in ultra-thin films, Low Energy Electron Diffraction Intensity vs Electron Energy (LEED-IV) curves of MBE grown films have been obtained. Using dynamical LEED theory, the atomic arrangement of thin films of metavalent solids has been determined for different film thicknesses. This analysis reveals significant changes of the atomic arrangement as compared to bulk samples.
Keywords: LEED; Phase change materials; thin film; metavalent bonding